1SS368

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.98V (typ.) Fast reverse recovery time: trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) 1SS368 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage VRM 85 Reverse voltage VR 80 Maximum (peak) forward current IFM 200 Average forward current IO 100 Surge current (10ms) IFSM 1 Power dissipation P 150 * Junction temperature Tj 125 Storage temperature range Tstg −55∼125 * : Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm. Unit V V mA mA A JEDEC mW EIAJ °C TOSHIBA °C Weight: 1.9mg ― ― 1-1F1A Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) VF (3) IR (1) IR (2) CT trr Test Circuit Test Condition ― IF = 1mA ― IF = 10mA ― IF = 100mA ― VR = 30V ― VR = 80V ― VR = 0, f = 1MHz ― IF = 10mA, Fig.1 Min Typ. Max Unit ― 0.62 ― ― 0.75 ― V ― 0.98 1.20 ― ― 0.1 µA ― ― 0.5 ― 0.5 3.0 pF ― 1.6 4.0 ns 961001EAA2 TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to obs...