Document
PD-95838C
IRHMS57064
RADIATION HARDENED
JANSR2N7470T1
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/698
5 TECHNOLOGY
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1
IRHMS53064 300K Rads (Si) 0.0066Ω 45A* JANSF2N7470T1
IRHMS54064 500K Rads (Si) 0.0066Ω 45A* JANSG2N7470T1 IRHMS58064 1000K Rads (Si) 0.0066Ω 45A* JANSH2N7470T1
Low-Ohmic TO-254AA
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n Low RDS(on)
n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C
IDM PD @ TC = 25°C
Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor
Units
45* 45* A
180
208 W
1.67
W/°C
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range
Lead Temperature Weight
±20 824 45 20 4.3 -55 to 150
300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical)
V mJ A mJ V/ns
oC
g
* Current is limited by package For footnotes refer to the last page
www.irf.com
1
10/19/11
IRHMS57064, JANSR2N7470T1
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
60 — —
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.067 — V/°C Reference to 25°C, ID = 1.0mA Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
— — 0.0066 Ω
VGS = 12V, ID = 45A Ã
VGS(th) gfs IDSS
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
2.0 — 4.0 V
VDS = VGS, ID = 1.0mA
42 — —
S
— —
— —
10 25
µA
VDS = 15V, IDS = 45A Ã VDS = 48V ,VGS = 0V
VDS = 48V,
— —
— —
100 -100
nA
— — 150
— — 75 nC
VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
VGS =12V, ID = 45A VDS = 30V
— — 50
— — 35
— —
— —
125 60
ns
VDD = 30V, ID = 45A VGS =12V, RG = 2.35Ω
— — 50
— 6.8 — nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss Crss
Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
— 5640 — — 2410 — — 105 — — 1.04 —
pF Ω
VGS = 0V, VDS = 25V f = 100KHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS ISM VSD trr QRR
ton
Continuous Source Current (Body Diode) — — 45*
Pulse Source Current (Body Diode) À
— — 180
A
Diode Forward Voltage
— — 1.2 V
Reverse Recovery Time
— — 170 ns
Reverse Recovery Charge
— — 760 nC
Tj = 25°C, IS = 45A, VGS = 0V Ã Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
RthCS RthJA
Junction-to-Case Case-to-Sink Junction-to-Ambient
— — 0.60 — 0.21 — — — 48
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
PRraed-IirartaiodniaCtiohnaracteristics
IRHMS57064, JANSR2N7470T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
.