JANSR2N7470T1 Datasheet: RADIATION HARDENED POWER MOSFET





JANSR2N7470T1 RADIATION HARDENED POWER MOSFET Datasheet

Part Number JANSR2N7470T1
Description RADIATION HARDENED POWER MOSFET
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download JANSR2N7470T1 Datasheet PDF

Features: PD-95838C IRHMS57064 RADIATION HARDENE D JANSR2N7470T1 POWER MOSFET 60V, N- CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: MIL-PRF-19500/69 8 5 TECHNOLOGY ™ Part Number Radiati on Level RDS(on) ID QPL Part Number IR HMS57064 100K Rads (Si) 0.0066Ω 45A* JANSR2N7470T1 IRHMS53064 300K Rads (Si ) 0.0066Ω 45A* JANSF2N7470T1 IRHMS54 064 500K Rads (Si) 0.0066Ω 45A* JANSG 2N7470T1 IRHMS58064 1000K Rads (Si) 0.0 066Ω 45A* JANSH2N7470T1 Low-Ohmic TO -254AA International Rectifier’s R5T M technology provides high performance power MOSFETs for space applications. T hese devices have been characterized fo r Single Event Effects (SEE) with usefu l performance up to an LET of 80 (MeV/( mg/cm2)). The combination of low RDS(on ) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor contro l. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature s.

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PD-95838C
IRHMS57064
RADIATION HARDENED
JANSR2N7470T1
POWER MOSFET
60V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/698
5 TECHNOLOGY
™
Part Number Radiation Level RDS(on) ID QPL Part Number
IRHMS57064 100K Rads (Si) 0.006645A* JANSR2N7470T1
IRHMS53064 300K Rads (Si) 0.006645A* JANSF2N7470T1
IRHMS54064 500K Rads (Si) 0.006645A* JANSG2N7470T1
IRHMS58064 1000K Rads (Si) 0.006645A* JANSH2N7470T1
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Units
45*
45* A
180
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
824
45
20
4.3
-55 to 150
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
V
mJ
A
mJ
V/ns
oC
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
10/19/11

                    
  






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