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1SS369

Toshiba Semiconductor

Diode


Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.) Low reverse current: IR = 5µA (max) 1SS369 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse voltage Reverse voltage VRM VR 45 40 Maximum (peak) forward curren...



Toshiba Semiconductor

1SS369

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