Document
PD - 94765
IRHMS57260SE
RADIATION HARDENED
JANSR2N7476T1
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/685
5 TECHNOLOGY
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHMS57260SE 100K Rads (Si) 0.044Ω 45A JANSR2N7476T1
International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Low-Ohmic TO-254AA
Features:
n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
45 29 A
180
208 W
1.67
W/°C
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction
256 45 20.8 19.8 -55 to 150
Storage Temperature Range
Lead Temperature Weight
300 (0.063 in.(1.6 mm from case for 10s)) 9.3 ( Typical)
V mJ A mJ V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
09/07/04
IRHMS57260SE, JANSR2N7476T1 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Pre-Irradiation
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage
RDS(on)
Static Drain-to-Source On-State Resistance
VGS(th) gfs IDSS
Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current
Min 200 —
—
2.5 35 — —
IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
— — — — — — — — — —
Ciss Coss Crss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance
— — — —
Typ Max Units
——
V
0.25 — V/°C
Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA
— 0.044 Ω
VGS = 12V, ID = 29A Ã
— 4.5 —— — 10 — 25
— 100 — -100 — 165 — 45 — 75 — 35 — 125 — 80 — 50 6.8 —
5295 900 37 1.47
— — — —
V S( ) µA
nA nC
ns
Ω
VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 29A Ã
VDS= 160V ,VGS=0V VDS = 160V,
VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V
VGS =12V, ID = 45A VDS = 100V
VDD = 100V, ID = 45A VGS =12V, RG = 2.35Ω
nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad VGS = 0V, VDS = 25V
pF f = 1.0MHz
Ω f = 0.89MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 45
ISM Pulse Source Current (Body Diode) À
— — 180
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 450 ns
QRR Reverse Recovery Charge
— — 6.9 µC
Tj = 25°C, IS = 45A, VGS = 0V Ã Tj = 25°C, IF = 45A, di/dt ≤100A/µs
VDD ≤ 25V Ã
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthCS RthJA
Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max
— — 0.60 — 0.21 — — — 48
Units °C/W
Test Conditions Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page
2 www.irf.com
PRraed-IirartaiodniaCtiohnaracteristics
IRHMS57260SE, JANSR2N7476T1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)
RDS(on)
VSD
Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-S.