JANSR2N7476T1 Datasheet: RADIATION HARDENED POWER MOSFET





JANSR2N7476T1 RADIATION HARDENED POWER MOSFET Datasheet

Part Number JANSR2N7476T1
Description RADIATION HARDENED POWER MOSFET
Manufacture International Rectifier
Total Page 8 Pages
PDF Download Download JANSR2N7476T1 Datasheet PDF

Features: PD - 94765 IRHMS57260SE RADIATION HARD ENED JANSR2N7476T1 POWER MOSFET 200V , N-CHANNEL THRU-HOLE (Low-Ohmic TO-25 4AA) Product Summary REF: MIL-PRF-1950 0/685 5 TECHNOLOGY ™ Part Number Ra diation Level RDS(on) ID QPL Part Numbe r IRHMS57260SE 100K Rads (Si) 0.044Ω 45A JANSR2N7476T1 International Recti fier’s R5TM technology provides high performance power MOSFETs for space app lications. These devices have been char acterized for Single Event Effects (SEE ) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination o f low RDS(on) and low gate charge reduc es the power losses in switching applic ations such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast s witching, ease of paralleling and tempe rature stability of electrical paramete rs. Low-Ohmic TO-254AA Features: n Low RDS(on) n Fast Switching n Single Even t Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requi.

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PD - 94765
IRHMS57260SE
RADIATION HARDENED
JANSR2N7476T1
POWER MOSFET
200V, N-CHANNEL
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
REF: MIL-PRF-19500/685
5 TECHNOLOGY
™
Part Number
Radiation Level RDS(on) ID QPL Part Number
IRHMS57260SE 100K Rads (Si) 0.04445A JANSR2N7476T1
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Low-Ohmic
TO-254AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
45
29 A
180
208 W
1.67
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
256
45
20.8
19.8
-55 to 150
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in.(1.6 mm from case for 10s))
9.3 ( Typical)
V
mJ
A
mJ
V/ns
oC
g
For footnotes refer to the last page
www.irf.com
1
09/07/04

                    
  






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