1SS370

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS370 High Voltage, High Speed Switching Applications z Low forward voltage : VF (2) = 0.9V (typ.) z Fast reverse recovery time : trr = 60ns (typ.) z Small total capacitance : CT = 1.5pF (typ.) z Small package : SC-70 1SS370 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 250 200 300 100 2 100 125 −55∼125 V V mA mA A mW JEDEC ― JEITA °C TOSHIBA SC−70 1-2P1D °C Weight: 0.006g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Symbol VF (1) VF (2) IR (1) IR (2) CT trr Test Circuit Test Condi...