MTB09P04DFP

CYStech Electronics Corp. Spec. No. : C877FP Issued Date : 2015.07.06 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB09P04DFP BVDSS ID @ VGS=-10V, TC=25°C RDS(ON)@VGS=-10V, ID=-25A RDS(ON)@VGS=-4.5V, ID=-15A -40V -56A 6.1mΩ(typ) 7.8mΩ(typ) Features Single Drive Requirement Low On-resistance Fast switching Characteristic Pb-free lead plating package Symbol MTB09P04DFP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device Package MTB09P04DFP-0-UB-S TO-220FP (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB09P04DFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C877FP Issued Date : 2015.07.06 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=-10V, TC=25°C (Package limited) Continuous Drain Current @VGS=-10V, TC=25°C (Silicon limited) Continuous Drain Current @VGS=-10V, TC=100°C Continuous Drain Current @VGS=-10V, TA=25°C (Note 2) Continuous Drain Current @VGS=-10V, TA=70°C (Note 2) Pulsed Drain Current (Note 4) TC=25℃ (Note 1) Power Dissipation TC=100℃ TA=25℃ (Note 1) (Note 2) TA=70℃ (Note 2) Single Pulse Avalanche Energy @L=1mH, ...