MTB11N03BV8

CYStech Electronics Corp. Spec. No. : CA00V8 Issued Date : 2015.05.25 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB11N03BV8 BVDSS ID @ TC=25°C, VGS=10V 30V 44A ID @ TA=25°C, VGS=10V 14A RDSON(TYP) VGS=10V, ID=14A 7.3mΩ VGS=4.5V, ID=12A 11.2mΩ Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package Equivalent Circuit MTB11N03BV8 Outline Pin 1 DFN3×3 G：Gate D：Drain S：Source Ordering Information Device MTB11N03BV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB11N03BV8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25°C(Silicon Limit) Continuous Drain Current @ VGS=10V, TC=100°C(Silicon Limit) Continuous Drain Current @ VGS=10V, TC=25°C(Package Limit) Continuous Drain Current @ VGS=10V, TA=25°C Continuous Drain Current @ VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=21A, RG=25Ω Total Power Dissipation TC=25℃ TA=25℃ Operating Junction and Storage Temperature Range S...