GFP8N60
General Description()
These N-Channel enhancement mode power field effect Transistors are produced using planar...
GFP8N60
General Description()
These N-Channel enhancement mode power field effect
Transistors are produced using planar stripe, DMOS technology. GFP8N60N，DMOS 。 This advanced technology has been especially tailored to minimize on - state resistance , provide superior switching performance,and Withstand high energy pulse in the avalanche and commutaion mode .These devices are well suited for high efficiency switch mode power supply，electronic lamp ballasts based on half bridge topology. GFP8N60、 ，、。
TO-220 1.Gate 2.Drain 3.Source
Absolute Maximum ratings（，，T=25 ℃ ）
Characteristics（） (）
Symbol（） BVDSS ID VGS EAS PD TSTG RθJC VSD
Value(） 600 7.5 + 30 230 147
-55 ~150 0.85 1.4
Units() V A V mJ W ℃
℃/ W V
Characteristics
Symbol (）
VGS(th) IGSS IDSS
RDS(on) gfs Ciss Coss Crss td(on) tr
td(off) tf Qg Qgs Qgd
Min.
Typ.
() ()
2.0 -
--
--
- 1.0
- 8.7
- 965
- 105
- 12
- 16.5
- 60.5
- 81
- 64.5
- 28
- 4.5
- 12
Page : 1/5
Max. ()
4.0 +100
10 1.2
1255 135
16 45 130 170 140 36 -
Units ()
V nA uA Ω S
Test Conditions ()
VDS= VGS,ID=250uA VGS= +30V, VDS= 0V VDS=600V ,VGS= 0V VGS= 10V,ID=3.75A VDS= 40V, ID=3.75A
pF VGS= 0V, VDS= 25V F=1.0MHz
ns
VDD= 300V, ID= 7.5A RG=25 Ω
nC VDS= 480V, VGS= 10V ID=7.5A
ID, Drain Current [ A]
RDS(ON)[ Ω ], Drain-Source On-Resistance
ID, Drain Current [ A]
101
Top:
VGS 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
100
101 150℃
25℃ 100
-55℃
※Notes
10-1
1.250us Pulse Test 2.Tc=25℃
10-...
