2SK2142

Ordering number : EN5369A 2SK2142 SANYO Semiconductors DATA SHEET 2SK2142 Features Low ON-resistance. Ultrahigh-speed switcing. Low-voltage drive. N-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol Conditions V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on) ID=1mA, VGS=0V IG=±100μA, VDS=0V VDS=250V, VGS=0V VGS=±25V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V Ratings 250 ±30 12 48 1.75 70 150 --55 to +150 Unit V V A A W W °C °C min 250 ±30 1.5 5 Ratings typ max Unit V V 100 μA ±10 μA 2.5 V 8S 0.25 0.35 Ω Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use ...