1SS385

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 10 200 * 100 * 1* 100 V V mA mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly JEITA ― TOSHIBA 1-2S1B Weight: 2.4mg (typ.) even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test Condition ― IF = 1mA ― IF = 5mA ― IF ...