Document
VN2222LLG
Small Signal MOSFET 150 mAmps, 60 Volts
N−Channel TO−92
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS Rating
Symbol Value Unit
Drain −Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms)
Drain Current − Continuous − Pulsed
Total Power Dissipation @ TA = 25°C Derate above 25°C
VDSS VDGR
VGS VGSM
ID IDM PD
60 Vdc 60 Vdc
± 20 ± 40
150 1000
400 3.2
Vdc Vpk mAdc
mW mW/°C
Operating and Storage Temperature Range TJ, Tstg −55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds
RqJA TL
312.5 300
°C/W °C
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
150 mA, 60 V RDS(on) = 7.5 W
N−Channel D
G
S
123
TO−92 CASE 29 STYLE 22
MARKING DIAGRAM & PIN ASSIGNMENT
VN22 22LL AYWW G
G
1 Source
2 Gate
3 Drain
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
April, 2011 − Rev. 4
1
Publication Order Number: VN2222LL/D
VN2222LLG
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc)
Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate−Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)
Drain−Source On−Voltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc)
On−State Drain Current (VGS = 10 Vdc, VDS ≥ 2.0 VDS(on))
Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time Turn−Off Delay Time
(VDD = 15 Vdc, ID = 600 mA, Rgen = 25 W, RL = 23 W)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min Max
Unit
V(BR)DSS IDSS
IGSSF
60 − Vdc
mAdc − 10
− 500
−
−100
nAdc
VGS(th) rDS(on)
VDS(on)
ID(on) gfs
0.6 2.5
Vdc
− 7.5 − 13.5
− − 1.5
3.75
750 −
W Vdc mA
100 − mmhos
Ciss Coss Crss
ton toff
− 60 pF − 25 − 5.0
− 10 ns − 10
ORDERING INFORM.