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VN2222LLG Dataheets PDF



Part Number VN2222LLG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Small Signal MOSFET
Datasheet VN2222LLG DatasheetVN2222LLG Datasheet (PDF)

VN2222LLG Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 60 Vdc 60 Vdc ± 20 ± 40 150 1000 400 3.2 Vdc Vpk mAdc mW mW/°C Operating and Storage Temperature Range TJ, Ts.

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VN2222LLG Small Signal MOSFET 150 mAmps, 60 Volts N−Channel TO−92 Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain−Gate Voltage (RGS = 1.0 MW) Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 60 Vdc 60 Vdc ± 20 ± 40 150 1000 400 3.2 Vdc Vpk mAdc mW mW/°C Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds RqJA TL 312.5 300 °C/W °C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 150 mA, 60 V RDS(on) = 7.5 W N−Channel D G S 123 TO−92 CASE 29 STYLE 22 MARKING DIAGRAM & PIN ASSIGNMENT VN22 22LL AYWW G G 1 Source 2 Gate 3 Drain A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 April, 2011 − Rev. 4 1 Publication Order Number: VN2222LL/D VN2222LLG ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate−Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C) Drain−Source On−Voltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) On−State Drain Current (VGS = 10 Vdc, VDS ≥ 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) SWITCHING CHARACTERISTICS (Note 1) Turn−On Delay Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 W, RL = 23 W) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. Symbol Min Max Unit V(BR)DSS IDSS IGSSF 60 − Vdc mAdc − 10 − 500 − −100 nAdc VGS(th) rDS(on) VDS(on) ID(on) gfs 0.6 2.5 Vdc − 7.5 − 13.5 − − 1.5 3.75 750 − W Vdc mA 100 − mmhos Ciss Coss Crss ton toff − 60 pF − 25 − 5.0 − 10 ns − 10 ORDERING INFORM.


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