VN2222LLG Signal MOSFET Datasheet

VN2222LLG Datasheet, PDF, Equivalent


Part Number

VN2222LLG

Description

Small Signal MOSFET

Manufacture

ON Semiconductor

Total Page 4 Pages
Datasheet
Download VN2222LLG Datasheet


VN2222LLG
VN2222LLG
Small Signal MOSFET
150 mAmps, 60 Volts
NChannel TO92
Features
This is a PbFree Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Drain Source Voltage
DrainGate Voltage (RGS = 1.0 MW)
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
60 Vdc
60 Vdc
± 20
± 40
150
1000
400
3.2
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature Range TJ, Tstg 55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, JunctiontoAmbient
Maximum Lead Temperature for
Soldering Purposes, 1/16from case
for 10 seconds
RqJA
TL
312.5
300
°C/W
°C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
150 mA, 60 V
RDS(on) = 7.5 W
NChannel
D
G
S
123
TO92
CASE 29
STYLE 22
MARKING DIAGRAM
& PIN ASSIGNMENT
VN22
22LL
AYWW G
G
1
Source
2
Gate
3
Drain
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
April, 2011 Rev. 4
1
Publication Order Number:
VN2222LL/D

VN2222LLG
VN2222LLG
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 100 mAdc)
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
GateBody Leakage Current, Forward
(VGSF = 30 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 0.5 Adc)
(VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C)
DrainSource OnVoltage
(VGS = 5.0 Vdc, ID = 200 mAdc)
(VGS = 10 Vdc, ID = 500 mAdc)
OnState Drain Current
(VGS = 10 Vdc, VDS 2.0 VDS(on))
Forward Transconductance
(VDS = 10 Vdc, ID = 500 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
TurnOn Delay Time
TurnOff Delay Time
(VDD = 15 Vdc, ID = 600 mA,
Rgen = 25 W, RL = 23 W)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Symbol
Min Max
Unit
V(BR)DSS
IDSS
IGSSF
60 Vdc
mAdc
10
500
100
nAdc
VGS(th)
rDS(on)
VDS(on)
ID(on)
gfs
0.6 2.5
Vdc
7.5
13.5
1.5
3.75
750
W
Vdc
mA
100 mmhos
Ciss
Coss
Crss
ton
toff
60 pF
25
5.0
10 ns
10
ORDERING INFORMATION
Device
VN2222LLG
Package
TO92
(PbFree)
Shipping
1000 Unit / Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Features VN2222LLG Small Signal MOSFET 150 mAmps , 60 Volts N−Channel TO−92 Features • This is a Pb−Free Device* MAXIM UM RATINGS Rating Symbol Value Unit D rain −Source Voltage Drain−Gate Vol tage (RGS = 1.0 MW) Gate−Source Volta ge − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Contin uous − Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C VDSS VDGR VGS VGSM ID IDM PD 60 Vdc 60 Vdc ± 20 ± 40 150 1000 400 3.2 Vdc Vpk mAdc mW mW/°C Operating and Storage T emperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratin gs may damage the device. Maximum Ratin gs are stress ratings only. Functional operation above the Recommended Operati ng Conditions is not implied. Extended exposure to stresses above the Recommen ded Operating Conditions may affect dev ice reliability. THERMAL CHARACTERISTI CS Characteristic Symbol Max Unit T hermal Resistance, Junction−to−Ambi ent Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds RqJA TL 312.5 3.
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