Power MOSFET
MTP2P50EG
Power MOSFET
2 Amps, 500 Volts, P−Channel TO−220
This high voltage MOSFET uses an advanced termination schem...
Description
MTP2P50EG
Power MOSFET
2 Amps, 500 Volts, P−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
Features
Robust High Voltage Termination Avalanche Energy Specified Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature This is a Pb−Free Device*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (RGS = 1.0 MW)
Gate−Source Voltage − Continuous − Non−Repetitive (tp ≤ 10 ms)
Drain Current − Continuous Drain Current − Continuous @ 100°C Drain Current − Single Pulse (tp ≤ 10 ms)
Total Power Dissipation Derate above 25°C
VDSS
VDGR
VGS VGSM
ID ID IDM
PD
500 Vdc
500 Vdc
± 20 Vdc ± 40 Vpk
2.0 Adc 1.6 6.0 Apk
75 W 0.6 W/°C
Operating and Storage Temperature ...
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