PowerTrench MOSFET. FDP150N10A Datasheet

FDP150N10A Datasheet PDF, Equivalent


Part Number

FDP150N10A

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDP150N10A Datasheet PDF


FDP150N10A Datasheet
FDP150N10A
N-Channel PowerTrench® MOSFET
100 V, 50 A, 15 mΩ
November 2013
Features
• RDS(on) = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
• Fast Switching Speed
• Low Gate Charge, QG = 16.2 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP150N10A_F102
100
±20
50
36
200
84.6
6.0
91
0.61
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP150N10A_F102
1.6
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
1
www.fairchildsemi.com

FDP150N10A Datasheet
Package Marking and Ordering Information
Part Number
FDP150N10A_F102
Top Mark
FDP150N10A
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V
ID = 250 μA, Referenced to 25oC
VDS = 80 V, VGS = 0 V
VDS = 80 V, TC = 150oC
VGS = ±20 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 50 A
VDS = 10 V, ID = 50 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss(er)
Qg(tot)
Qgs
Qgs2
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Engry Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 50 V, VGS = 0 V,
f = 1 MHz
VDS = 50 V, VGS = 0 V
VDS = 50 V , VGS = 10 V,
ID = 50 A
f = 1 MHz
(Note 4)
Min.
100
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.08
-
-
-
-
12.5
40
1080
267
11
436
16.2
5.3
2.6
3.7
1.3
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 50 V, ID = 50 A,
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 50 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, VDD = 50 V, ISD = 50 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2 mH, IAS = 9.2 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD 100 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
-
-
-
-
-
-
13
16
21
5
-
-
-
50
55
Quantity
50 units
Max. Unit
-
-
1
500
±100
V
V/oC
μA
nA
4.0 V
15.0 mΩ
-S
1440
355
-
-
21.0
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
36 ns
42 ns
52 ns
20 ns
50 A
200 A
1.3 V
- ns
- nC
©2011 Fairchild Semiconductor Corporation
FDP150N10A Rev. C1
2
www.fairchildsemi.com


Features Datasheet pdf FDP150N10A — N-Channel PowerTrench® M OSFET FDP150N10A N-Channel PowerTrench ® MOSFET 100 V, 50 A, 15 mΩ November 2013 Features • RDS(on) = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A • Fast Switching Speed • Low Gate Charge, Q G = 16.2 nC (Typ.) • High Performance Trench Technology for Extremely Low RD S(on) • High Power and Current Handli ng Capability • RoHS Compliant Descr iption This N-Channel MOSFET is produce d using Fairchild Semiconductor’s adv anced PowerTrench® process that has be en tailored to minimize the on-state re sistance while maintaining superior swi tching performance. Applications • Sy nchronous Rectification for ATX / Serve r / Telecom PSU • Motor Drives and Un interruptible Power Supplies • Micro Solar Inverter D GDS TO-220 G S Ab solute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS VGSS ID IDM EAS dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Sour ce Voltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100oC).
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