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NP110N055PUJ Dataheets PDF



Part Number NP110N055PUJ
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOS FET
Datasheet NP110N055PUJ DatasheetNP110N055PUJ Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP110N055PUJ-E1B-AY Note NP110N055PUJ-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 1000 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 9500 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TC = 25°C) PT1 288 Total Power Dissipation (TA = 25°C) PT2 1.8 Channel Temperature Tch 175 Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 Repetitive Avalanche Energy Note3 Tstg −55 to +175 EAS 435 IAR 66 EAR 435 V V A A W W °C °C mJ A mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19731EJ1V0DS00 (1st edition) Date Published April 2009 NS Printed in Japan 2009 NP110N055PUJ ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(th) | yfs | RDS(on) VDS = VGS, ID = 250 μA VDS = 5 V, ID = 55 A VGS = 10 V, ID = 55 A Input Capacitance Ciss VDS = 25 V, Output Capacitance Coss VGS = 0 V, Reverse Transfer Capacitance Crss f = 1 MHz Turn-on Delay Time td(on) VDD = 28 V, ID = 55 A, Rise Time tr VGS = 10 V, Turn-off Delay Time td(off) RG = 0 Ω Fall Time tf Total Gate Charge QG VDD = 44 V, Gate to Source Charge QGS VGS = 10 V, Gate to Drain Charge Body Diode Forward Voltage Note QGD VF(S-D) ID = 110 A IF = 110 A, VGS = 0 V Reverse Recovery Time trr IF = 110 A, VGS = 0 V, Reverse Recovery Charge Note Pulsed test Qrr di/dt = 100 A/μs MIN. TYP. MAX. UNIT 1 μA ±100 nA 2.0 3.0 4.0 V 55 117 S 1.9 2.4 mΩ 9500 14250 pF 1060 1590 pF 320 580 pF 45 100 ns 20 50 ns 100 200 ns 10 30 ns 150 230 nC 35.


FDMS8570SDC NP110N055PUJ EM78P267


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