1SS388 Type Diode Datasheet

1SS388 Datasheet, PDF, Equivalent


Part Number

1SS388

Description

Silicon Epitaxial Schottky Barrier Type Diode

Manufacture

Toshiba Semiconductor

Total Page 3 Pages
Datasheet
Download 1SS388 Datasheet


1SS388
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS388
High Speed Switching Application
1SS388
Unit: mm
Small package
Low forward voltage: VF (3) = 0.54V (typ.)
Low reverse current: IR = 5μA (Max.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM 300 mA
Average forward current
IO 100 mA
Surge current (10ms)
IFSM
1A
Power dissipation
P * 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
JEDEC
Operating temperature range
Topr
40 to 100
°C
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-1G1A
Weight: 1.4mg (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1mA
IF = 10mA
IF = 100mA
VR = 40V
VR = 0, f = 1MHz
Min Typ. Max Unit
0.28
0.36
V
0.54 0.60
― ― 5 μA
18 25 pF
Equivalent Circuit (Top View)
Marking
© 1994-2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
1994-11
2018-08-07

1SS388
1SS388
© 1994-2018
Toshiba Electronic Devices & Storage Corporation
2
2018-08-07


Features TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS388 High Speed Switchi ng Application 1SS388 Unit: mm  Sm all package  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse cur rent: IR = 5μA (Max.) Absolute Maximu m Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) r everse Voltage VRM 45 V Reverse volt age VR 40 V Maximum (peak) forward cu rrent IFM 300 mA Average forward curr ent IO 100 mA Surge current (10ms) I FSM 1A Power dissipation P * 150 mW Junction temperature Tj 125 °C Stor age temperature range Tstg −55 to 1 25 °C JEDEC ― Operating temperat ure range Topr −40 to 100 °C JEI TA ― Note: Using continuously under heavy loads (e.g. the application of h igh temperature/current/voltage and the significant change in TOSHIBA 1-1G1A Weight: 1.4mg (typ.) temperature, et c.) may cause this product to decrease in the reliability significantly even i f the operating conditions (i.e. operating temperature/current/voltage, etc.) are.
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