1SS391

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 1SS391 Low Voltage High Speed Switching z Low forward voltage z Small package : VF (2) = 0.23V (typ.) @IF = 5mA : SC-61 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 15 10 200 * 100 * 1* 150 * 125 −55 to 125 −40 to 100 V V mA mA A mW °C °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum JEDEC ― JEITA SC-61 TOSHIBA 2-3J1A Weight: 0.013g (typ.) ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) VF (3) IR CT Test Circuit Test Condition ― IF = 1...