1SS392

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application 1SS392 Unit: mm z Low forward voltage z Low reverse current z Small package : VF (3) = 0.54V (typ.) : IR = 5μA (max) : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Average forward current Surge current (10ms) Power dissipation IO IFSM P 100 * 1* 150 * mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC TO-236MOD Operating temperature range Topr −40 to 100 °C JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 1-3G1F Weight: 0.012g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating t...