Document
SOT23
PMV30UN2
20 V, N-channel Trench MOSFET
24 April 2014
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW
3. Applications
• LED driver • Power management • Low-side load switch • Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state resistance
Conditions Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-12 -
12 V
[1] - - 5.4 A
- 24 32 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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NXP Semiconductors
PMV30UN2
20 V, N-channel Trench MOSFET
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain
Simplified outline
3
12
TO-236AB (SOT23)
Graphic symbol
D
G
S 017aaa253
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PMV30UN2
TO-236AB
Description plastic surface-mounted package; 3 leads
Version SOT23
7. Marking
Table 4. Marking codes Type number
PMV30UN2
Marking code [1]
%K6
[1] % = placeholder for manufacturing site code
PMV30UN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
PMV30UN2
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj junction temperature
Tamb
ambient temperature
Tstg storage temperature
Source-drain diode
IS source current
Tsp = 25 °C Tamb = 25 °C
[1] [1] [1] [2] [1]
[1]
Min Max Unit - 20 V
-12 12
V
- 5.4 A
- 4.2 A
- 2.7 A
- 18 A
- 490 mW
- 1000 mW - 5000 mW
-55 150 °C
-55 150 °C
-65 150 °C
- 0.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
PMV30UN2
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 15
NXP Semiconductors
120
Pder (%)
80
017aaa123
PMV30UN2
20 V, N-channel Trench MOSFET
120
Ider (%)
80
017aaa124
40 40
0 - 75
- 25
25
75 125 175 Tj (°C)
Fig. 1.
MOSFET transistor: Normalized total power dissipation as a function of junction temperature
0 - 75 - 25
25
75 125 175 Tj (°C)
Fig. 2.
MOSFET transistor: Normalized continuous drain current as a function of junction temperature
102
ID (A)
10
Limit RDSon = VDS/ID
1
DC; Tamb = 25 °C; drain mounting pad 6 cm2
10-1
DC; Tsp = 25 °C
aaa-012418
tp = 10 µs
tp = 100 µs tp = 1 ms tp = 10 ms tp = 100 ms
10-2 10-1
IDM = single pulse
1
10 102 VDS (V)
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage
9. Thermal characteristics
Table 6. Symbol Rth(j-a)
Thermal characteristics Parameter
thermal resistance from junction to ambient
PMV30UN2
Product data sheet
Conditions in free air
t≤5s
[1] [2] [2]
All information provided in this document is subject to legal disclaimers.
24 April 2014
Min Typ Max Unit - 217 255 K/W - 105 124 K/W - 73 86 K/W
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
PMV30UN2
20 V, N-channel Trench MOSFET
Symbol Rth(j-sp)
Parameter
Conditions
thermal resistance from junction to solder point
Min Typ Max Unit - 20 25 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103 aaa-012832
Zth(j-a) (K/W) duty cycle = 1
102 0.5 0.25
0.75
0.33 0.2
0.1 0.05
0.02 10 0
0.01
1 10- 3
10- 2
FR4 PCB, standard footprint
10- 1
1
10 102 103 tp (s)
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103 aaa-012833
Zth(j-a) (K/W)
duty cycle = 1
102 0.75
0.5
0.33 0.2
0.25
0.1
10 0
0.05
0.02 0.01
1 10- 3
10- 2
10- 1
FR4 PCB, mounting .