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PMV30UN2 Dataheets PDF



Part Number PMV30UN2
Manufacturers NXP
Logo NXP
Description N-channel Trench MOSFET
Datasheet PMV30UN2 DatasheetPMV30UN2 Datasheet (PDF)

SOT23 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3. Applications • LED driver • Power management • Low-side load switch • Switching .

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SOT23 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability of 1000 mW 3. Applications • LED driver • Power management • Low-side load switch • Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; ID = 4.2 A; Tj = 25 °C Min Typ Max Unit - - 20 V -12 - 12 V [1] - - 5.4 A - 24 32 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMV30UN2 20 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 12 TO-236AB (SOT23) Graphic symbol D G S 017aaa253 6. Ordering information Table 3. Ordering information Type number Package Name PMV30UN2 TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 7. Marking Table 4. Marking codes Type number PMV30UN2 Marking code [1] %K6 [1] % = placeholder for manufacturing site code PMV30UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 15 NXP Semiconductors PMV30UN2 20 V, N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current Tsp = 25 °C Tamb = 25 °C [1] [1] [1] [2] [1] [1] Min Max Unit - 20 V -12 12 V - 5.4 A - 4.2 A - 2.7 A - 18 A - 490 mW - 1000 mW - 5000 mW -55 150 °C -55 150 °C -65 150 °C - 0.9 A [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMV30UN2 Product data sheet All information provided in this document is subject to legal disclaimers. 24 April 2014 © NXP Semiconductors N.V. 2014. All rights reserved 3 / 15 NXP Semiconductors 120 Pder (%) 80 017aaa123 PMV30UN2 20 V, N-channel Trench MOSFET 120 Ider (%) 80 017aaa124 40 40 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 1. MOSFET transistor: Normalized total power dissipation as a function of junction temperature 0 - 75 - 25 25 75 125 175 Tj (°C) Fig. 2. MOSFET transistor: Normalized continuous drain current as a function of junction temperature 102 ID (A) 10 Limit RDSon = VDS/ID 1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-1 DC; Tsp = 25 °C aaa-012418 tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms tp = 100 ms 10-2 10-1 IDM = single pulse 1 10 102 VDS (V) Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient PMV30UN2 Product data sheet Conditions in free air t≤5s [1] [2] [2] All information provided in this document is subject to legal disclaimers. 24 April 2014 Min Typ Max Unit - 217 255 K/W - 105 124 K/W - 73 86 K/W © NXP Semiconductors N.V. 2014. All rights reserved 4 / 15 NXP Semiconductors PMV30UN2 20 V, N-channel Trench MOSFET Symbol Rth(j-sp) Parameter Conditions thermal resistance from junction to solder point Min Typ Max Unit - 20 25 K/W [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. 103 aaa-012832 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.75 0.33 0.2 0.1 0.05 0.02 10 0 0.01 1 10- 3 10- 2 FR4 PCB, standard footprint 10- 1 1 10 102 103 tp (s) Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 aaa-012833 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.25 0.1 10 0 0.05 0.02 0.01 1 10- 3 10- 2 10- 1 FR4 PCB, mounting .


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