PMV65XPEA

SOT23 PMV65XPEA 20 V, P-channel Trench MOSFET 27 November 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very fast switching Enhanced power dissipation capability: Ptot = 890 mW ElectroStatic Discharge (ESD) protection 2 kV HBM AEC-Q101 qualified 3. Applications Relay driver High speed line driver High-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.3 A Static characteristics RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C resistance - 67 78 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Scan or click this QR code to view the latest information for this product NXP Semiconductors PMV65XPEA 20 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline 3 Graphic symbol D 12 TO-236AB (SOT23) G S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name PMV65XPEA TO-236AB D...