PSMN075-100MSE

LFPAK33 PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling the next generation of Powerover-Ethernet (PoE) systems capable of delivering up to 100W to each powered device (PD). Large screen LCD displays, 3G / 4G / Wi-Fi hot-spots and pan-tilt-zoom CCTV cameras, for example, are placing increased demands on the power sourcing equipment (PSE) in terms of “soft-start” procedures, resilience to short-circuits, thermal management and power density. Part of NXP’s “NextPower Live” MOSFET portfolio, the PSMN075-100MSE has been designed specifically to compliment the latest PoE controllers, offering both superior linear mode operation and very low RDS(on) in a costeffective, industry compatible, LFPAK33 package. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Low Rdson for low conduction losses Ultra reliable LFPAK33 package – no glue, no wires, 175°C Very low IDSS 3. Applications IEEE802.3at and proprietary solutions - (type 2) Suitable for PoE applications upto 30W Use PSMN040-100MSE for higher power requirements 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current Tj = 25 °C; VGS = 10 V; Fig. 1 Ptot total power dissipation Tmb = 25 °...