1SS399

TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching Applications 1SS399 Unit: mm  Small package : SC-61  Low forward voltage : VF = 1.0 V (typ.)  High voltage : VR = 400 V (min)  Fast reverse recovery time : trr = 0.5 μs (typ.)  Small total capacitance : CT = 2.5 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 420 V Reverse voltage VR 400 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation Junction temperature P 150 mW JEDEC Tj 125 °C JEITA ― SC-61 Storage temperature range Tstg −55 to 125 °C TOSHIBA 1-3J1A Weight: 13 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * : Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse curren...