Silicon diode
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS403
High Voltage Switching Applications
AEC-Q101 Qualified (Note1)
...
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS403
High Voltage Switching Applications
AEC-Q101 Qualified (Note1)
Two-pin small packages are suitable for higher mounting densities.
Excellent in forward current and forward voltage
characteristics
: VF (2) = 0.90V (typ.)
Fast reverse recovery time : trr = 60ns (max)
Small total capacitance
: CT = 1.5pF (typ.)
Note1: For detail information, please contact to our sales.
1SS403
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range
VRM VR IFM IO IFSM P Tj Tstg
250 200 300 100
2 200 * 125 −55 to 125
V V mA mA A mW °C °C
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.0045g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and ...
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