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1SS403

Toshiba Semiconductor

Silicon diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 High Voltage Switching Applications  AEC-Q101 Qualified (Note1) ...


Toshiba Semiconductor

1SS403

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 High Voltage Switching Applications  AEC-Q101 Qualified (Note1)  Two-pin small packages are suitable for higher mounting densities.  Excellent in forward current and forward voltage characteristics : VF (2) = 0.90V (typ.)  Fast reverse recovery time : trr = 60ns (max)  Small total capacitance : CT = 1.5pF (typ.) Note1: For detail information, please contact to our sales. 1SS403 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range VRM VR IFM IO IFSM P Tj Tstg 250 200 300 100 2 200 * 125 −55 to 125 V V mA mA A mW °C °C JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.0045g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and ...




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