1SS82

1SS82 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-149A (Z) Rev. 1 Jul. 1995 Features High reverse voltage. (VR = 200V) High reliability with glass seal. Ordering Information Type No. 1SS82 Cathode band Verdure 2nd band Light Blue Package Code DO-35 Outline 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS82 Absolute Maximum Ratings* 2 (Ta = 25°C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average forward current Power dissipation Junction temperature Storage temperature Symbol VRM* VR I FM I FSM * IO Pd Tj Tstg 2 1 Value 250 200 625 1 200 400 175 –65 to +175 Unit V V mA A mA mW °C °C Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Symbol VF I R1 I R2 Capacitance Reverse recovery time C t rr Min — — — — — Typ — — — 1.5 — Max 1.0 0.2 100 — 100 pF ns Unit V µA Test Condition I F = 100mA VR = 200V VR = 250V VR = 0V, f = 1MHz I F = IR = 30mA, Irr = 3mA, R L = 100Ω 2 1SS82 10 –1 Forward current I F (A) 10 –3 10 –4 0 0.2 0.8 0.4 0.6 1.0 Forward voltage VF (V) Ta = 12 Ta = 5°C 75° C Ta = 25°C Ta = –25° C 10 –2 1.2 Fig.1 Forward current Vs. Forward voltage –5 10 Ta = 75°C Reverse current I R (A) 10 –6 Ta = 50°C 10 –7 Ta = 25°C 10 –8 10 –9 0 50 150 200 250 100 Reverse voltage VR (V) 300 Fig.2 Revers...