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10N70K

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 10N70K 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Powe...


Unisonic Technologies

10N70K

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Description
UNISONIC TECHNOLOGIES CO., LTD 10N70K 10A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N70K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge circuits, etc.  FEATURES * RDS(ON)<1.2Ω @ VGS = 10V, ID = 5A * Low Gate Charge (Typical 44nC) * Low CRSS ( typical 10 pF) * High Switching Speed * Improved dv/dt capability  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 10N70KL-TF1-T 10N70KG-TF1-T TO-220F1 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS 10N70KL-TF1-T (1)Packing Type (2)Package Type (3)Lead Free (1) T: Tube (2) TF1: TO-220F1 (3) L: Lead Free, G: Halogen Free Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-A69.B 10N70K Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Avalanche Current (Note 2) VGSS IAR ±30 V 10 A Drain Current Continuous Pulsed (Note 2) ID IDM 10 A 38 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 150 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 50 W TJ +150 °C Operating Temperature Storage Temperature TOPR TSTG -5...




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