4N60-R

UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.5Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness  SYMBOL 1 Power MOSFET TO-220F1  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N60L-TF1-T 4N60G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube  MARKING INFORMATION PACKAGE TO-220F1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 6 QW-R502-A64.a 4N60-R Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 4 A Drain Current Continuous Pulsed (Note 2) ID IDM 4.0 A 16 A Avalanche Energy Single Pulsed (Note 3) Peak Diode Recovery dv/dt (Note 4) EAS dv/dt 160 mJ 4.5 V/ns Power Dissipation Junction Temperature PD 36 W TJ +150 °С Operating Temperature Storage Tem...