N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N60Z-E
4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60Z-E is a high voltage p...
Description
UNISONIC TECHNOLOGIES CO., LTD
4N60Z-E
4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60Z-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON)=2.5Ω @ VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
4N60ZL-TF1-T
4N60ZG-TF1-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F1
Pin Assignment 123 GDS
Packing Tube
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1 of 6
QW-R502-A22. A
4N60Z-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS 600 V VGSS ±20 V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche
Energy
Single
Single Pulsed (Note Repetitive (Note 2)
3)
Peak Diode Recovery dv/dt (Note 4)
IAR ID IDM EAS EAR dv/dt
4.4 A 4.0 A 16 A 200 mJ 10.6 mJ 4.5 V/ns
Power Dissipation Junction Temperature
PD 36 W
TJ
+150
°С
Operating Temperature Storage Temperature
TOPR TSTG
-55 ~ +150 -55 ~ +1...
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