4N65-R

UNISONIC TECHNOLOGIES CO., LTD 4N65-R Preliminary 4A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N65-R is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching applications including power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) = 3.4Ω @VGS=10V, ID=2.2A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL 1 Power MOSFET TO-220F1  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N65L-TF1-T 4N65G-TF1-T Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 Pin Assignment 123 GDS Packing Tube  MARKING INFORMATION PACKAGE MARKING TO-220F1 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A65.a 4N65-R Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 ±30 V V Avalanche Current (Note2) Drain Current Continuous Pulsed (Note2) Avalanche Energy Single Pulsed (Note3) IAR ID IDM EAS 4A 4.0 A 16 A 60 mJ Peak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/ns Power Dissipation PD 36 W Junction Temperature Operating Temperature TJ TOPR +150 -55 ~ ...