4N70-C

UNISONIC TECHNOLOGIES CO., LTD 4N70-C Preliminary 4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 2.8Ω @VGS = 10 V * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 4N70L-TF1-T 4N70G-TF1-T 4N70L-TN3-R 4N70G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220F1 TO-252 Pin Assignment 123 GDS GDS Packing Tube Tape Reel  MARKING INFORMATION PACKAGE TO-220F1 TO-252 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd MARKING 1 of 6 QW-R502-A89.a 4N70-C Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 700 V VGSS ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 4A 4A 16 A 150 mJ 10.6 mJ 4.5 V/ns Power Dissipation TO-220F1 TO-252 PD 36 49 W Junction Temperatu...