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4N70-E Dataheets PDF



Part Number 4N70-E
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 4N70-E Datasheet4N70-E Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 4N70-E 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.2Ω @ VGS = 10V, ID = 2.2A * Low Reverse Transfer.

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UNISONIC TECHNOLOGIES CO., LTD 4N70-E 4.4A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.  FEATURES * RDS(ON) < 3.2Ω @ VGS = 10V, ID = 2.2A * Low Reverse Transfer Capacitance ( CRSS = Typical 13pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 4N70L-TF1-T 4N70G-TF1-T TO-220F1 4N70L-TF2-T 4N70G-TF2-T TO-220F2 4N70L-TF3-T 4N70G-TF3-T TO-220F 4N70L-TMN2-T 4N70G-TMN2-T TO-251NS2 4N70L-TN3-R 4N70G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 123 GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-A72.D 4N70-E  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-A72.D 4N70-E Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±30 V IAR 4.4 A Drain Current Continuous Pulsed (Note 2) ID IDM 4.4 A 17.6 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 160 mJ 10.6 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 36 W TO-251NS2/TO-252 49 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature. 3. L = 20mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER TO-220F/TO-220F1 Junction to Ambient TO-220F2 TO-251NS2/TO-252 TO-220F/TO-220F1 Junction to Case TO-220F2 TO-251NS2/TO-252 SYMBOL θJA θJC RATINGS 62.5 110 3.47 2.55 UNIT °С/W °С/W °С/W °С/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-A72.D 4N70-E Power MOSFET  ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250μA Drain-Source Leakage Current IDSS VDS=700V, VGS=0V Gate-Source Leakage Current Forward Reverse IGSS VGS=30 V, VDS=0 V VGS=-30 V, VDS=0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,.


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