Document
UNISONIC TECHNOLOGIES CO., LTD
4N70-E
4.4A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N70-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 3.2Ω @ VGS = 10V, ID = 2.2A * Low Reverse Transfer Capacitance ( CRSS = Typical 13pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
4N70L-TF1-T
4N70G-TF1-T
TO-220F1
4N70L-TF2-T
4N70G-TF2-T
TO-220F2
4N70L-TF3-T
4N70G-TF3-T
TO-220F
4N70L-TMN2-T
4N70G-TMN2-T
TO-251NS2
4N70L-TN3-R
4N70G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tape Reel
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1 of 8
QW-R502-A72.D
4N70-E
MARKING
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-A72.D
4N70-E
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 700 V
Gate-Source Voltage Avalanche Current (Note 2)
VGSS ±30 V IAR 4.4 A
Drain Current
Continuous Pulsed (Note 2)
ID IDM
4.4 A 17.6 A
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
EAS EAR
160 mJ 10.6 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
TO-220F/TO-220F1 TO-220F2
PD
36 W
TO-251NS2/TO-252
49 W
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 20mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤ 4.4A, di/dt ≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220F/TO-220F1
Junction to Ambient
TO-220F2
TO-251NS2/TO-252
TO-220F/TO-220F1
Junction to Case
TO-220F2
TO-251NS2/TO-252
SYMBOL θJA
θJC
RATINGS 62.5 110 3.47 2.55
UNIT °С/W °С/W °С/W °С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-A72.D
4N70-E
Power MOSFET
ELECTRICAL CHARACTERISTICS (TA =25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
Drain-Source Leakage Current
IDSS VDS=700V, VGS=0V
Gate-Source Leakage Current
Forward Reverse
IGSS
VGS=30 V, VDS=0 V VGS=-30 V, VDS=0 V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,.