N-CHANNEL POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD
4N70-R
Preliminary
4A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N70-R is a ...
Description
UNISONIC TECHNOLOGIES CO., LTD
4N70-R
Preliminary
4A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N70-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche. This high speed switching power MOSFET is usually used in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) < 2.8Ω @VGS = 10 V * Ultra Low Gate Charge ( Typical 16nC ) * Low Reverse Transfer Capacitance ( CRSS = Typical 6 pF ) * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
SYMBOL
1
Power MOSFET
TO-220F1
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
4N70L-TF1-T
4N70G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package TO-220F1
Pin Assignment 123 GDS
Packing Tube
MARKING INFORMATION
PACKAGE
TO-220F1
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MARKING
1 of 6
QW-R502-A66.a
4N70-R
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS 700 V VGSS ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IAR ID IDM EAS
4A 4A 16 A 55 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
PD 36 W
Junction Temp...
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