6N65-P

UNISONIC TECHNOLOGIES CO., LTD 6N65-P 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.  FEATURES * RDS(ON) < 2.0Ω @ VGS = 10V, ID = 3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 6N65L-TA3-T 6N65G-TA3-T TO-220 6N65L-TF1-T 6N65G-TF1-T TO-220F1 6N65L-TF3-T 6N65G-TF3-T TO-220F 6N65L-TM3-T 6N65G-TM3-T TO-251 6N65L-TMS-T 6N65G-TMS-T TO-251S 6N65L-TMS2-T 6N65G-TMS2-T TO-251S2 6N65L-TMS4-T 6N65G-TMS4-T TO-251S4 6N65L-TN3-R 6N65G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12 3 GD S GD S GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 9 QW-R502-977.F 6N65-P  MARKING Power MOSFET UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 9 QW-R502-977.F 6N65-P Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Avalanche Current (Note 2) ...