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1SV172

Toshiba Semiconductor

Diode

TOSHIBA Diode Silicon Epitaxial Pin Type 1SV172 1SV172 VHF~UHF Band RF Attenuator Applications • Useful for small siz...


Toshiba Semiconductor

1SV172

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TOSHIBA Diode Silicon Epitaxial Pin Type 1SV172 1SV172 VHF~UHF Band RF Attenuator Applications Useful for small size tuner Small total capacitance: CT = 0.25 pF (typ.) Low series resistance: rs = 3 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 50 V IF 50 mA Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Forward voltage Total capacitance Series resistance VR IR = 10 μA IR VR = 50 V VF IF = 50 mA (Note) CT VR = 50 V, f = 1 MHz rs IF = 10 mA, f = 100 MHz Note: CT is measured by 3 terminal method with capacitance bridge. Marking Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 1-3G1G Weight: 0.013 g (typ.) Min Typ. Max Unit 50 ⎯ ⎯ ⎯ ⎯ 0.1 ⎯ 0.95 ⎯ ⎯ 0.25 ⎯ ⎯3⎯ V ...




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