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6N70Z

Unisonic Technologies

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N70Z Preliminary 6.0A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N70Z is an...


Unisonic Technologies

6N70Z

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Description
UNISONIC TECHNOLOGIES CO., LTD 6N70Z Preliminary 6.0A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N70Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed, low gate charge and low input capacitance. The UTC 6N70Z is universally applied in high efficiency switch mode power supply.  FEATURES * RDS(ON)=1.9Ω @ VGS=10V, ID=3A * High switching speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N70ZL-T82-T 6N70ZG-T82-T 6N70ZL-TM3-T 6N70ZG-TM3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-82 TO-251 Pin Assignment 123 GD S GD S Packing Tube Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-A02. a. 6N70Z Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage (Note 2) VGSS ±20 V Drain Current Continuous TC=25°C TC=100°C ID 6A 3.8 A Pulsed IDM 24 A Avalanche Current (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR EAS EAR dv/dt 6A 300 mJ 13 mJ 2.5 V/ns Power Dissipation Linear Derarting Factor SOT-82 TO-251 SOT-82 TO-251 PD 75 W 55 W 0.60 W/°C 0.44 W/°C Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Notes: 1. Absolute maximum ratings are those values beyond ...




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