Document
UNISONIC TECHNOLOGIES CO., LTD
7N60-M
7.4A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.2@ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N60L-TA3-T
7N60G-TA3-T
7N60L-TF3-T
7N60G-TF3-T
7N60L-TF1-T
7N60G-TF1-T
7N60L-TF2-T
7N60G-TF2-T
7N60L-T2Q-T
7N60G-T2Q-T
7N60L-TQ2-R
7N60G-TQ2-R
7N60L-TQ2-T
7N60G-TQ2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F2 TO-262 TO-263 TO-263
Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS
Packing
Tube Tube Tube Tube Tube Tape Reel Tube
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1 of 6
QW-R502-996. A
7N60-M
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage Gate-Source Voltage
VDSS VGSS
600 V ±30 V
Avalanche Current (Note 2)
Drain Current
Continuous Pulsed (Note 2)
Avalanche Energy
Single Pulsed (Note 3) Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR ID IDM EAS EAR dv/dt
7.4 A 7.4 A 29.6 A 530 mJ 14.2 mJ 4.5 V/ns
TO-220/TO-262/TO-263
142
Power Dissipation
TO-220F/TO-220F1
PD
48 W
TO-220F2
50
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220/TO-262/TO-263
Junction to Case
TO-220F/TO-220F1
TO-220F2
SYMBOL θJA
θJC
RATINGS 62.5 0.88 2.6 2.5
UNIT °C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-996. A
7N60-M
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS VDS = 600V, VGS = 0V
Gate- Source Leakage Current
Forward Reverse
IGSS
VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance
VGS(TH) RDS(ON)
VDS = VGS, ID = 250μA VGS = 10V, ID = 3.7A
DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
CISS COSS CRSS
VDS=25V, VGS=0V, f=1.0 MHz
SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
tD(ON) tR
tD(OFF) tF
VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2)
SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge
QG QGS QGD
VDS=480V, ID=7.4A, VGS=10V (Note 1, 2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0V, IS = 7.4 A
Maximum Continuous Drain-Source Diode Forward Current
IS
Maximum Pulsed Drain-Source Diode Forward Current
ISM
Reverse Recovery Time
trr VGS = 0V, IS = 7.4 A,
Reverse Recovery Charge
QRR dIF / dt = 100A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
MIN TYP MAX UNIT
600 V 1 μA
100 nA -100 nA 0.67 V/°C
2.0 4.0 V 1.0 1.2 Ω
1000 1200 pF 117 140 pF 25 30 pF
70 100 135 160 220 250 160 190
ns ns ns ns
135 160 10 35
nC nC nC
1.4 V 7.4 A
29.6 A
320 ns 2.4 μC
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QW-R502-996. A
7N60-M
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+ -
+ VDS -
L
Power MOSFET
RG
VGS
Same Type as D.U.T.
Driver
* dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test
VDD
VGS (Driver)
ISD (D.U.T.)
VDS (D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W. D= Period
VGS= 10V
IFM, Body Diode Forward Current di/dt
IRM Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-996. A
7N60-M
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS RG
10V
Pulse Width≤ 1μs Duty Factor≤0.1%
RL
D.U.T.
VDD
Switching Test Circuit
Power MOSFET
Switching Waveforms
Same
12V
50kΩ
0.2µF
0.3µF
Type as D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charg.