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7N60-M Dataheets PDF



Part Number 7N60-M
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 7N60-M Datasheet7N60-M Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 7N60-M 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2@ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanch.

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UNISONIC TECHNOLOGIES CO., LTD 7N60-M 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-M is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2@ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60L-TQ2-R 7N60G-TQ2-R 7N60L-TQ2-T 7N60G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-262 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-996. A 7N60-M Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR ID IDM EAS EAR dv/dt 7.4 A 7.4 A 29.6 A 530 mJ 14.2 mJ 4.5 V/ns TO-220/TO-262/TO-263 142 Power Dissipation TO-220F/TO-220F1 PD 48 W TO-220F2 50 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient TO-220/TO-262/TO-263 Junction to Case TO-220F/TO-220F1 TO-220F2 SYMBOL θJA θJC RATINGS 62.5 0.88 2.6 2.5 UNIT °C/W °C/W UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-996. A 7N60-M Power MOSFET  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA Drain-Source Leakage Current IDSS VDS = 600V, VGS = 0V Gate- Source Leakage Current Forward Reverse IGSS VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance VGS(TH) RDS(ON) VDS = VGS, ID = 250μA VGS = 10V, ID = 3.7A DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS VDS=25V, VGS=0V, f=1.0 MHz SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tD(ON) tR tD(OFF) tF VDD =300V, ID =7.4A, RG =25Ω (Note 1, 2) SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge QG QGS QGD VDS=480V, ID=7.4A, VGS=10V (Note 1, 2) DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, Reverse Recovery Charge QRR dIF / dt = 100A/μs (Note 1) Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature MIN TYP MAX UNIT 600 V 1 μA 100 nA -100 nA 0.67 V/°C 2.0 4.0 V 1.0 1.2 Ω 1000 1200 pF 117 140 pF 25 30 pF 70 100 135 160 220 250 160 190 ns ns ns ns 135 160 10 35 nC nC nC 1.4 V 7.4 A 29.6 A 320 ns 2.4 μC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-996. A 7N60-M  TEST CIRCUITS AND WAVEFORMS D.U.T. + - + VDS - L Power MOSFET RG VGS Same Type as D.U.T. Driver * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD VGS (Driver) ISD (D.U.T.) VDS (D.U.T.) Peak Diode Recovery dv/dt Test Circuit P.W. Period P. W. D= Period VGS= 10V IFM, Body Diode Forward Current di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-996. A 7N60-M  TEST CIRCUITS AND WAVEFORMS (Cont.) VDS VGS RG 10V Pulse Width≤ 1μs Duty Factor≤0.1% RL D.U.T. VDD Switching Test Circuit Power MOSFET Switching Waveforms Same 12V 50kΩ 0.2µF 0.3µF Type as D.U.T. VDS VGS 3mA DUT Gate Charge Test Circuit Gate Charg.


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