7N60-Q

UNISONIC TECHNOLOGIES CO., LTD 7N60-Q 7.4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) = 1.2 @ VGS = 10V, ID = 3.7A * Fast Switching Capability * Avalanche Energy Tested * Improved dv/dt Capability, High Ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N60L-TA3-T 7N60G-TA3-T 7N60L-TF3-T 7N60G-TF3-T 7N60L-TF1-T 7N60G-TF1-T 7N60L-TF2-T 7N60G-TF2-T 7N60L-T2Q-T 7N60G-T2Q-T 7N60L-TQ2-R 7N60G-TQ2-R 7N60L-TQ2-T 7N60G-TQ2-T Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-220F2 TO-262 TO-263 TO-263 Pin Assignment 123 GDS GDS GDS GDS GDS GDS GDS Packing Tube Tube Tube Tube Tube Tape Reel Tube www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-983. A 7N60-Q Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 V ±30 V Avalanche Current (Note 2) Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) Peak Diode Recovery dv/dt (Note 4) IAR I...