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BUY25CS12K-01 Dataheets PDF



Part Number BUY25CS12K-01
Manufacturers Infineon
Logo Infineon
Description HiRel RadHard Power-MOS
Datasheet BUY25CS12K-01 DatasheetBUY25CS12K-01 Datasheet (PDF)

Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS  Low RDS(on)  Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V  Total Ionisation Dose (TID) hardened 100 kRad approved (Level R)  Hermetically sealed  N-channel 1 2 3 4 Type BUY25CS12K-01 BUY25CS12K-11 Marking - Pin Configuration 123 D SG G DS Package 4 Not connected TO-257AA Not connected TO-257AA Maximum Ra.

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Data Sheet BUY25CS12K-01 HiRel RadHard Power-MOS  Low RDS(on)  Single Event Effect (SEE) hardened LET 85, Range: 118µm LET 55, Range: 90µm VGS = -10V, VDS = 250V VGS = -15V, VDS = 250V VGS = -15V, VDS = 120V VGS = -20V, VDS = 160V  Total Ionisation Dose (TID) hardened 100 kRad approved (Level R)  Hermetically sealed  N-channel 1 2 3 4 Type BUY25CS12K-01 BUY25CS12K-11 Marking - Pin Configuration 123 D SG G DS Package 4 Not connected TO-257AA Not connected TO-257AA Maximum Ratings Parameter Drain Source Voltage Gate Source Voltage Drain Gate Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Source Current Drain Current Pulsed, tp limited by Tjmax Total Power Dissipation 1) Junction Temperature Operating and Storage Temperature Avalanche Energy Symbol VDS VGS VDG ID IS IDM Ptot TJ Top EAS Values 250 +/- 20 250 12.4 8 12.4 50 75 -55 to + 150 -55 to + 150 60 Thermal Characteristics Thermal Resistance (Junction to Case) Soldering Temperature Notes.: 1) For TS ≤ 25°C. For TS > 25°C derating is required. Rth JC Tsol 1.66 250 Unit V V V A A Apk W °C °C mJ K/W °C IFAG PMM RFS D HIR 1 of 8 March 2015 Data Sheet BUY25CS12K-01 Electrical Characteristics, at TA=25°C; unless otherwise specified Parameter Symbol Values Unit min. max. DC Characteristics Breakdown Voltage Drain to Source ID = 0.25mA, VGS = 0V BVDSS Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS VGS(th) Gate to Source Leakage Current VDS = 0V, VGS = +/- 20V IGSS Drain Current VDS = 200V, VGS = 0V Drain Source On Resistance 1) VGS = 10V, ID = 8A Source Drain Diode, Forward Voltage 1), 2) VGS = 0V, IS = 12.4A IDSS rDS(ON) VSD 250 2.0 - -V 4.0 V +/-100 nA 25 µA 0.13 Ω 1.2 V AC Characteristics Turn-on Delay Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω Rise Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω Turn-off Delay Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω Fall Time VDD = 50% VDS, ID = 8A, RG = 4.7Ω Reverse Recovery Time VDD < 50% VDS, ID = 12.4A Common Source Input Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Common Source Output Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Common Source Reverse Transfer Capacitance VDS = 100V, VGS = 0V, f = 1.0MHz Total Gate Charge VDD = 50% VDS, VGS = 10V, ID = 12.4A td(ON) tr td(OFF) tf trr Ciss Coss Crss QG Notes.: 1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%. 2) Measured within 2.0 mm of case. 1.3 90 1 - 25 ns 25 ns 35 ns 20 ns 400 ns 1.9 nF 150 pF 6 pF 42 nC IFAG PMM RFS D HIR 2 of 8 March 2015 Data Sheet Electrical Characteristics at TA=125°C; unless otherwise specified BUY25CS12K-01 Parameter Symbol Values Unit min. max. DC Characteristics Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS Gate to Source Leakage Current VDS = 0V, VGS = +/- 20V VGS(th) IGSS 1.5 - -V +/-200 nA Drain Current VDS = 200V, VGS = 0V Drain Source On Resistance 1) VGS = 10V, ID = 8A IDSS rDS(ON) - 250 µA 0.3 Ω Notes.: 1) Pulsed Measurement: Pulse Width < 300µs, Duty Cycle <2.0%. Electrical Characteristics at TA=-55°C; unless otherwise specified Parameter DC Characteristics Gate Threshold Voltage ID = 1.0mA, VDS ≥ VGS Symbol Values Unit min. max. VGS(th) - 5.0 V IFAG PMM RFS D HIR 3 of 8 March 2015 Data Sheet 1 Safe operating area ID = f(VDS); TC = 25°C parameter: tp BUY25CS12K-01 2 Max. transient thermal impedance ZthJC = f(tp) parameter: D = tp/T IFAG PMM RFS D HIR 4 of 8 March 2015 Data Sheet BUY25CS12K-01 3 Typ. output characteristics 4 Typ. output characteristics ID = f(VDS); Tj = 25 °C parameter: VGS ID = f(VDS); Tj = 150 °C parameter: VG 5 Typ. drain-source on-state resistance RDS(on) = f(ID); Tj = 150 °C parameter: VGS 6 Typ. drain-source on-state resistance RDS(on) = f(Tj) ID=8A IFAG PMM RFS D HIR 5 of 8 March 2015 Data Sheet BUY25CS12K-01 7 Typ. transfer characteristics 8 Typ. gate threshold voltage ID = f(VGS); |VDS| > 2 |ID| RDS(on)max parameter: Tj ID=f(Tj) ID = 1mA 9 Typ. forward characteristics of reverse diode IF = f(VSD) parameter: Tj 10 Typ. drain-source breakdown voltage BVDSS = f(Tj) ID = 250µA IFAG PMM RFS D HIR 6 of 8 March 2015 Data Sheet BUY25CS12K-01 11 Typ. capacitances 12 Typ. gate charge C = f(VDS); VGS = 0 V; f = 1 MHz VGS = f(Qgate); ID = 12.4 A pulsed parameter: VDD IFAG PMM RFS D HIR 7 of 8 March 2015 Data Sheet BUY25CS12K-01 TO-257AA Package 10.6 3.6 1 23 5.1 1.0 Edition 2015-03 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2015 All Rights Reserved. 13.5 10.6 16.0 16.5 [2.54] [2.54] Dimensions are typical [mm] 0.8 3.0 Caution This package contains beryllia. Therefore it must not be in any form machined, grinded, sanded, polished or any other mechanical operation which will produce dust and particles. Attention please! The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or hints given herein, any typical values stated.


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