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1SV225

Toshiba Semiconductor

Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers ...


Toshiba Semiconductor

1SV225

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV225 Electronic Tuning Applications of FM Receivers · Low series resistance: rs = 0.35 (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 32 125 -55~125 Unit V °C °C 1SV225 Unit: mm Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 1-3G1F Weight: 0.013 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C3 V C30 V C3 V/C30 V rs IR = 10 mA VR = 30 V VR = 3 V, f = 1 MHz VR = 30 V, f = 1 MHz ¾ VR = 3 V, f = 100 MHz 32 (Note 1) (Note 1) (Note 1) ¾ 18.5 6.6 2.6 (Note 1) ¾ ¾ ¾ 19.7 7.2 0.35 ¾ 50 21 7.7 2.9 0.5 V nA pF pF ¾ W Note 1: Characteristics between anode 1 and anode 2 Marking 1 2003-04-02 1SV225 (Note 2) Note 2: dC = C (Ta) - C C (25) (25) ´ 100 (%) 2 2003-04-02 1SV225 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a ...




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