Variable Capacitance Diode
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV225
Electronic Tuning Applications of FM Receivers
...
Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV225
Electronic Tuning Applications of FM Receivers
· Low series resistance: rs = 0.35 (typ.) · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Junction temperature Storage temperature range
Symbol
VR Tj Tstg
Rating
32 125 -55~125
Unit
V °C °C
1SV225
Unit: mm
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
1-3G1F
Weight: 0.013 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance
VR IR C3 V C30 V C3 V/C30 V rs
IR = 10 mA VR = 30 V VR = 3 V, f = 1 MHz VR = 30 V, f = 1 MHz
¾ VR = 3 V, f = 100 MHz
32
(Note 1) (Note 1) (Note 1)
¾ 18.5 6.6 2.6
(Note 1) ¾
¾ ¾ 19.7 7.2
0.35
¾ 50 21 7.7 2.9 0.5
V nA pF pF ¾ W
Note 1: Characteristics between anode 1 and anode 2
Marking
1 2003-04-02
1SV225
(Note 2)
Note 2:
dC
=
C
(Ta) - C C (25)
(25)
´ 100
(%)
2 2003-04-02
1SV225
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a ...
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