1SV228

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV228 1SV228 Electronic Tuning Applications of FM Receivers Low rs: rs = 0.3 Ω (typ.) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature VR 15 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 1-3G1F Weight: 0.013 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR C3 V C8 V C3 V/C8 V rs IR = 10 μA VR = 15 V VR = 3 V, f = 1 MHz VR = 8 V, f = 1 MHz ⎯ VR = 3 V, f = 100 MHz 15 ⎯ ⎯ ⎯ ⎯ 10 (Note 1) 28.5 30.5 32.5 (Note 1) 11.7 12.7 13.7 (Note 1) 2.1 ⎯ 2.6 (Note 1) ⎯ 0.3 0.5 V nA pF pF ⎯ Ω Note 1: Characteristics between anode 1 and anode 2...