IGBT
IKW30N60TA
TrenchStop® Series
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recov...
Description
IKW30N60TA
TrenchStop® Series
q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features:
Automotive AEC Q101 qualified Designed for DC/AC converters for Automotive Application Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time 5 µs TrenchStop® and Fieldstop technology for 600 V applications
offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Green Package Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Applications:
Main inverter Air – Con compressor PTC heater Motor drives
C G
E
PG-TO247-3
Type
VCE
IKW30N60TA 600V
IC 30A
VCE(sat),Tj=25°C 1.5V
Tj,max 175C
Marking K30T60A
Package PG-TO247-3
IFAG IPC TD VLS
1
Rev. 2.3 17.09.2014
IKW30N60TA
TrenchStop® Series
q
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage, Tj ≥ 25C
VCE
DC collector current, limited by Tjmax
TC = 25C TC = 105C
Pulsed collector current, tp limited by Tjmax1)
Turn off safe operating area, VCE 600V, Tj 175C, tp 1µs1)
IC
ICpuls -
Diode forward current, limited by Tjmax Diode pulsed current, tp limited by Tjmax1)
TC = 25C TC = 100C
IF IFpuls
Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C
VGE tSC
Power dissipat...
Similar Datasheet
- IKW30N60DTP IGBT - Infineon
- IKW30N60H3 IGBT - Infineon Technologies
- IKW30N60T IGBT - Infineon Technologies
- IKW30N60TA IGBT - Infineon