Diode
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV237
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Ch...
Description
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV237
VHF~UHF Band RF Attenuator Applications
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage Forward current Junction temperature Storage temperature range
Symbol
VR IF Tj Tstg
Rating
50 50 125 -55~125
Unit
V mA °C °C
1SV237
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage Reverse current Forward voltage Total capacitance Series resistance
Symbol
VR IR VF CT rs
Test Condition
IR = 10 mA VR = 50 V IF = 50 mA VR = 50 V, f = 1 MHz IF = 10 mA, f = 100 MHz
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-3J1A
Weight: 0.013 g (typ.)
Min Typ. Max Unit
50 ¾ ¾ ¾ ¾ 0.1 ¾ 0.95 ¾ ¾ 0.25 ¾ ¾ 3.5 ¾
V mA V pF W
1 2003-03-24
1SV237
2 2003-03-24
1SV237
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specificati...
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