1SV239

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 1SV239 VCO for UHF Radio Ultra low series resistance: rs = 0.44 Ω (typ.) Useful for small size set Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 15 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol Test Condition VR IR C2 V C10 V C2 V/C10 V rs IR = 1 μA VR = 15 V VR = 2 V, f = 1 MHz VR = 10 V, f = 1 MHz ⎯ VR = 1 V, f = 470 MHz Marking Min Typ. Max Unit 15 ⎯ ⎯ ⎯⎯ 3 3.8 4.25 4.7 1.5 1.75 2.0 2.0 2.4 ⎯ ⎯ 0.44 0.6 V nA pF pF ⎯ Ω 1 2007-11-01 1SV239 (Note) Note: δC = C (Ta) − C C (25) (25)...