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1SV242 Dataheets PDF



Part Number 1SV242
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Variable Capacitance Diode
Datasheet 1SV242 Datasheet1SV242 Datasheet (PDF)

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV242 TV VHF Wide Band Tuning · High capacitance ratio: C1 V/C28 V = 14.5 (typ.) · Low series resistance: rs = 0.65 Ω (typ.) · Excellent C-V characteristics, and small tracking error. · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV242 Unit: mm Electri.

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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV242 TV VHF Wide Band Tuning · High capacitance ratio: C1 V/C28 V = 14.5 (typ.) · Low series resistance: rs = 0.65 Ω (typ.) · Excellent C-V characteristics, and small tracking error. · Small package Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Peak reverse voltage Junction temperature Storage temperature range Symbol VR VRM Tj Tstg Rating 30 35 (RL = 10 kW) 125 -55~125 Unit V V °C °C 1SV242 Unit: mm Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 1-3G1F Weight: 0.013 g (typ.) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance VR IR = 1 mA IR VR = 28 V C1 V VR = 1 V, f = 1 MHz C28 V VR = 28 V, f = 1 MHz C1 V/C28 V ¾ rs VR = 5 V, f = 470 MHz 30 (Note 1) ¾ 36 (Note 1) 2.43 (Note 1) 13.4 (Note 1) ¾ ¾ ¾ 39 2.7 14.5 0.65 ¾ 10 42 3.0 ¾ 0.8 V nA pF pF ¾ W Note 1: Characteristic between anode 1 and anode 2 Note 2: Units are compounded in one package and are matched to 2.5% C (max) - C (min) C (min) =< 0.025 (VR = 1~28 V) Marking 1 2003-04-02 1SV242 (Note 3) Note 3: dC = C (Ta) - C C (25) (25) ´ 100 (%) 2 2003-04-02 1SV242 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 3 2003-04-02 .


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