PPJC7438
50V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
50 V
Current 400mA
SOT-323
Features
RDS(ON) , VGS@10V, ID@500mA<1.45Ω RDS(ON) ,
[email protected], ID@200mA<1.95Ω RDS(ON) ,
[email protected], ID@100mA<4.0Ω RDS(ON) ,
[email protected], ID@10mA<4.0Ω(typ.) Advanced Trench Process Technology ESD Protected 2KV HBM Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. (Halogen Free)
Mechanical Data
Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00018 ounces, 0.005 grams Marking: C38
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Power Dissipation
TA=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT 50 +20 400
1200 350 2.8 -55~150
357
UNITS V V mA mA
mW mW/ oC
oC
oC/W
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PPJC7438
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Diode Maximum Continuous Drain-Source Diode Forward Current
SYMBOL
BVDSS VGS(th)
RDS(on)
IDSS IGSS
Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf
IS
TEST CONDITION
VGS=0V,ID=250uA VDS=VGS, ID=250uA VGS=10V,ID=500mA VGS=4.5V,ID=200mA VGS=2.5V,ID=100mA VGS=1.8V,ID=10mA VDS=50V,VGS=0V VGS=+20V,VDS=0V
VDS=25V, ID=500mA, VGS=4.5V
VDS=25V, VGS=0V, f=1.0MHZ
VDD=25V, ID=500mA, VGS=10V, RG=6Ω (Note 1,2)
---
Diode Forward Voltage
VSD IS=500mA, VGS=0V
MIN. TYP. MAX. UNITS
50 - - V
0.5 0.86 1.0
V
- 1.2 1.45
-
1.3 1.95
Ω
- 1.7 4.0
- 4.0 -
- - 1 uA - - +10 uA
- 0.95 - 0.34 - 0.32 - 36 - 11 - 6.6 - 2.3 - 20 -7- 20 -
nC pF ns
- - 500 mA - 0.9 1.5 V
NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper 4. Guaranteed by design, not subject to production testing.
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PPJC7438
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
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Fig.6 Body Diode Characteristics
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PPJC7438
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
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PPJC7438
PART NO PACKING CODE VERSION
Part No Packing Code PJC7438_R1_00001 PJC7438_R2_00001
Package Type SOT-323 SOT-323
Packing type 3K pcs / 7” reel 12K pcs / 13” reel
Marking C38 C38
Version Halogen free Halogen free
MOUNTING PAD LAYOUT
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PPJC7438
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