PPJE8401
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-0.9A
Features
RDS(ON) ,
[email protected],
[email protected]<130mΩ RDS(ON) ,
[email protected],
[email protected]<160mΩ RDS(ON) ,
[email protected],
[email protected]<210mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. Lead free in compliance with EU RoHS 2011/65/EU
directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-523 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00007 ounces, 0.002 grams Marking: E01
SOT-523
Unit : inch(mm)
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -20 +12 -0.9 -3.6 300 2.4
-55~150
417
UNITS V V A A
mW mW/ oC
oC
oC/W
March 10,2014-REV.00
Page 1
PPJE8401
Electrical Characteristics (TA=25oC unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Turn-On Delay Time Turn-On Rise Time Turn-...
