PPJS6833
30V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-30 V Current
-1.1A
SOT-23 6L
Features
R...
PPJS6833
30V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-30 V Current
-1.1A
SOT-23 6L
Features
RDS(ON) , VGS@-4,5V,
[email protected]<370mΩ RDS(ON) ,
[email protected],
[email protected]<540mΩ RDS(ON) ,
[email protected],
[email protected]<970mΩ Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 6L Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0005 ounces, 0.0141 grams Marking: SG3
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance - Junction to Ambient (Note 3)
SYMBOL VDS VGS ID IDM
PD
TJ,TSTG
RθJA
LIMIT -30 +8 -1.1 -4.4 1.25 10
-55~150
100
UNITS V V A A W
mW/ oC oC
oC/W
January 22,2015-REV.01
Page 1
PPJS6833
Electrical
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reve...