PJT7413

PPJT7413 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -2.5A SOT-363-1 Features  RDS(ON) , [email protected], [email protected]<85mΩ  RDS(ON) , [email protected], [email protected]<115mΩ  RDS(ON) , [email protected], [email protected]<150mΩ  RDS(ON) , [email protected], [email protected]<250mΩ  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-363-1 Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.00028 ounces, 0.00794 grams  Marking: T13 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 4) Power Dissipation Ta=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT -20 +12 -2.5 -10 750 6 -55~150 167 UNITS V V A A mW mW/ oC oC oC/W January 27,2015-REV.01 Page 1 PPJT7413 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic(Note 5) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output C...