PJT7838

PPJT7838 50V N-Channel Enhancement Mode MOSFET Voltage 50 V Current 400mA Features  RDS(ON) , VGS@10V, ID@500mA<1.45Ω  RDS(ON) , [email protected], ID@200mA<1.95Ω  RDS(ON) , [email protected], ID@100mA<4.0Ω  RDS(ON) , [email protected], ID@10mA<4.0Ω(typ.)  Advanced Trench Process Technology  ESD Protected 2KV HBM  Specially Designed for Relay driver, Speed line drive, etc.  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case : SOT-363 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight : 0.0002 ounces, 0.006 grams  Marking: T38 SOT-363 Unit: inch(mm) Maximum Ratings and Thermal Characteristics o (TA=25 C unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation TA=25oC Derate above 25oC Operating Junction and Storage Temperature Range Typical Thermal resistance - Junction to Ambient (Note 3) SYMBOL VDS VGS ID IDM PD TJ,TSTG RθJA LIMIT 50 +20 400 1200 350 2.8 -55~150 357 UNITS V V mA mA mW mW/ oC oC oC/W June 17,2015-REV.00 Page 1 PPJT7838 Electrical Characteristics o (TA=25 C unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Resistance Zero Gate Voltage Drain Current Gate-Source Leakage Current Dynamic (Note 4) Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacita...