RU30231R

RU30231R N-Channel Advanced Power MOSFET MOSFET Features 30V/230A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Pin Description TO-220 Applications DC-DC Converters and Off-line UPS Switching Applications N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanche Energy, Single Pulsed TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2012 Rating 30 ±20 175 -55 to 175 ① 230 ② 920 ① 230 ① 164 300 150 0.5 Unit V °C °C A A A W W °C/W 272 mJ www.ruichips.com RU30231R Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition RU30231R Unit Min. Typ. Max. Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current ④ RDS(ON) Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS=30V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±20V, V...